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| RDD050N20 Transistors 10V Drive Nch MOSFET RDD050N20 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) CPT3 Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Source) Application Switching Packaging specifications Package Type RDD050N20 Code Basic ordering unit (pieces) Taping TL 2500 Equivalent Circuit 2 1 1 BODY DIODE 2 GATE PROTECTION DIODE (1)GATE (2)DRAIN (3)SOURCE Absolute maximum ratings (Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Source Current (Body Diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 IAS 2 EAS 2 PD Tch Tstg Limits 200 30 5 20 5 20 5 75 20 150 -55 to +150 Unit V V A A A A A mJ W C C (1) (2) (3) A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Avalanche Current Avalanche Energy Total Power Dissipation (TC=25C) Channel Temperature Storage Temperature 1 Pw 10s, Duty cycle 1% 2 L 4.5mH, VDD=50V, RG=25, 1Pulse, Tch=25C Thermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 6.25 Unit C/W 1/5 RDD050N20 Transistors Electrical characteristics (Ta=25C) Parameter Gate-Source Leakage Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Pulsed Symbol IGSS V(BR) DSS IDSS VGS (th) RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Min. 200 2.0 1.1 Typ. 0.55 1.8 292 92 28 10 22 23 28 9.3 2.8 3.7 Max. 10 25 4.0 0.72 Unit A V A V S pF pF pF ns ns ns ns nC nC nC Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=200V, VGS=0V VDS=10V, ID=1mA ID=2.5A, VGS=10V VDS=10V, ID=2.5A VDS=10V VGS=0V f=1MHz ID=2.5A, VDD 100V VGS=10V RL=40 RG=10 VDD=100V VGS=10V ID=5A Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage Reverse recovery time Reverse recovery charge Pulsed Symbol VSD trr Qrr Min. - - - Typ. - 117 0.37 Max. 1.5 - - Unit V ns C Conditions IS= 5.0A, VGS=0V IDR= 5.0A, VGS=0V di/dt= 100A / s 2/5 RDD050N20 Transistors Electrical characteristic curves 100 10 Ta=25C 9 Pulsed 8V 100 VDS=10V Pulsed DRAIN CURRENT : ID (A) DRAIN CURRENT :ID(A) DRAIN CURRENT : ID (A) PW=100us 10 1ms 1 DC OPERATING 0.1 Tc=25C Single Pulsed 0.01 1 10 100 1000 8 7 6 5 4 3 2 1 10V 9V 7V 10 1 Ta=125C Ta=75C Ta=25C Ta= -25C 6V 0.1 5V VGS=4V 0 0 2 4 6 8 10 12 14 16 18 20 0.01 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) DRAIN-SOURCE VOLTAGE : ID (A) Fig.1 Maximum Safe Operating Area Fig.2 Typical Output Characteristics Fig.3 Typical Transfer Characteristics GATE THRESHOLD VOLTAGE : VGS (th) (V) 6.4 10 2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () 5.6 4.8 4 3.2 2.4 1.6 0.8 0 -50 -25 0 25 50 75 VDS=10V ID=1mA VGS=10V Pulsed Ta= -25C Ta=25C Ta=75C Ta=125C 1.75 1.5 1.25 1 0.75 0.5 0.25 0 0 5 10 15 20 ID=5A 2.5A Ta=25C Pulsed 10 100 125 150 1 0.01 0.1 1 10 25 30 CHANNEL TEMPERATURE : Tch (C) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Gate Threshold Voltage vs. Channel Temperature Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 2.5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () 5 FORWARD TRANSFER ADMITTANCE :Yfs(S) 2 REVERSE DRAIN CURRENT : IDR (A) VGS=10V Pulsed 10 VDS=10V Pulsed 100 VGS=0V Pulsed 10 2 1 0.5 Ta= -25C Ta=25C Ta=75C Ta=125C 1.5 1 1 ID=5A 2.5A Ta= -25C Ta=25C Ta=75C Ta=125C 0.5 0.2 0.1 0.1 0 -50 -25 0 25 50 75 100 125 150 0.05 0.05 0.1 0.2 0.5 1 2 5 10 20 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 CHANNEL TEMPERATURE : Tch (C) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.8 Forward Transfer Admittance vs. Drain Current Fig.9 Reverse Drain Current vs. Source-Drain Voltage 3/5 RDD050N20 Transistors 1000 200 20 VDS 180 160 140 120 100 80 60 40 20 0 0 2 4 6 VDD=40V VDD=100V VDD=160V VDD=40V VDD=100V VDD=160V Ciss 100 VGS 10 REVERSE RECOVERY TIME : trr (ns) DRAIN-SOURCE VOLTAGE : IDS (V) GATE-SOURCE VOLTAGE : VGS (V) Ta=25C ID=5A Pulsed 1000 CAPACITANCE : C (pF) Ta=25C di / dt=100A / s VGS=0V Pulsed 100 10 f=1MHz VGS=0V Ta=25C Pulsed 1 0.1 1 Coss Crss 10 100 1000 8 10 12 0 14 1 0.1 1 10 DRAIN SOURCE VOLTAGE : VDS (V) TOTAL GATE CHARGE : Qg (nC) REVERSE DRAIN CURRENT : IDR (A) Fig.10 Typical Capacitance vs. Drain-Source Voltage Fig.11 Dynamic Input Characteristics Fig.12 Reverse Recovery Time vs. Reverse Drain Current 1000 SWITCHING TIME : t (ns) tf 100 Ta=25C VDD=100V VGS=10V RQ=10 Pulsed td (off) tr 10 td (on) 1 0.1 1 10 DRAIN CURRENT : ID (A) Fig.13 Switching Characteristcs 4/5 RDD050N20 Transistors Switching characteristics measurement circuit Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate charge waveform Fig.3-1 Avalanche measurement circuit Fig.3-2 Avalanche waveform 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright (c) 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0 |
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